
Fundamentals of Modern VLSI Devices - Hardcover
by Yuan Taur, Tak H. Ning
$79.99
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Languages:EnglishPublisher:Cambridge University PressISBN-13:9781108480024ISBN-10:1108480020UPC:9781108480024Book Category:Computers, Technology & EngineeringBook Subcategory:Logic Design, Electrical, ElectronicsBook Topic:OptoelectronicsSize:9.80 x 6.90 x 1.20 inchesWeight:2.9035Product ID:SCYJ7280FK
A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry.
Languages:EnglishPublisher:Cambridge University PressISBN-13:9781108480024ISBN-10:1108480020UPC:9781108480024Book Category:Computers, Technology & EngineeringBook Subcategory:Logic Design, Electrical, ElectronicsBook Topic:OptoelectronicsSize:9.80 x 6.90 x 1.20 inchesWeight:2.9035Product ID:SCYJ7280FK
Taur, Yuan: - Yuan Taur is a Distinguished Professor of Electrical and Computer Engineering at the University of California, San Diego, having previously worked at IBM's T. J. Watson Research Center, New York. He is an IEEE Fellow.Ning, Tak H.: - Tak H. Ning is an IBM Fellow (Retired) at the T. J. Watson Research Center, New York. He is a Fellow of the IEEE and the American Physical Society, and a member of the US National Academy of Engineering.
Publisher: Cambridge University Press
Edition
3rd Revised Edition
Contributor(s)
Authors
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