Characterization of Wide Bandgap Power Semiconductor Devices - Hardcover
Pay over time for orders over $35.00 with
Based on the authors' years of extensive experience, this is an authoritative overview of Wide Bandgap (WBG) device characterization. It provides essential tools to assist researchers, advanced students and practicing engineers in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors. The book presents practical considerations for real applications, and includes examples of applying the described methodology.
Fei (Fred) Wang is Professor of Electrical Engineering and Condra Chair of Excellence in Power Electronics, and Technical Director of NSF/DOE Engineering Research Center CURENT at The University of Tennessee, Knoxville, USA. He also holds a joint appointment with Oak Ridge National Lab. Prof. Wang has published over 400 journal and conference papers, authored 3 book chapters, and holds 15 US patents. He is a fellow of IEEE and NAI.
Zhang, Zheyu: -Zheyu Zhang is a Lead Power Electronics Engineer with General Electric Global Research. He was a Research Assistant Professor at the University of Tennessee, Knoxville from 2015 to 2018. He has published over 60 papers in the most prestigious journals and conference proceedings, four patent applications with one licensed, and two IEEE tutorial seminars. He was the recipient of two IEEE prize paper awards.
Jones, Edward A.: -Edward A. Jones is a Senior Applications Engineer with Efficient Power Conversion Corporation. He completed his Ph.D. at The University of Tennessee, where he was a Chancellor's Fellow, a CURENT Fellow, and a Bredesen Energy Sciences and Engineering Fellow. He has published over 20 peer-reviewed IEEE papers, an IEEE tutorial seminar, and a patent.
Contributor(s)
Authors
Free shipping on orders over $75. Standard shipping takes 3-7 business days. Returns accepted within 30 days of purchase.